XRD measurement of thermal strain in InSb-based devices
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Abstract
The low temperature-induced strain in the thin brittle InSb upper part of ready-to-work InSb-based infrared photo-detectors (Hybrid Focal Plane Arrays (HFPA) technology) has been measured using X-ray diffraction (XRD). Assuming no shear component and no surface normal stress in the InSb upper part of the device and using linear elasticity laws lead to simple strain-stress relations. It was shown that the maximum value of the thermal stress in the InSb part of the studied samples is well under the value of the yield stress of InSb at the working temperature of the devices.
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Curie, BP 30179</s1><s2>86962 Chasseneuil-Futuroscope</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Poitou-Charentes</region><settlement type="city">Chasseneuil-Futuroscope</settlement></placeName><orgName type="university">Université de Poitiers</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0365808</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0365808 INIST</idno><idno type="RBID">Pascal:07-0365808</idno><idno type="wicri:Area/Main/Corpus">007717</idno><idno type="wicri:Area/Main/Repository">006D58</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Elasticity</term><term>Indium antimonides</term><term>Infrared detectors</term><term>Shear</term><term>Strain measurement</term><term>Stress-strain relations</term><term>Surface stresses</term><term>Thermal stresses</term><term>XRD</term><term>Yield strength</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diffraction RX</term><term>Mesure déformation</term><term>Contrainte thermique</term><term>Détecteur IR</term><term>Cisaillement</term><term>Contrainte superficielle</term><term>Elasticité</term><term>Relation contrainte déformation</term><term>Limite élasticité</term><term>Indium antimoniure</term><term>InSb</term><term>6220D</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The low temperature-induced strain in the thin brittle InSb upper part of ready-to-work InSb-based infrared photo-detectors (Hybrid Focal Plane Arrays (HFPA) technology) has been measured using X-ray diffraction (XRD). Assuming no shear component and no surface normal stress in the InSb upper part of the device and using linear elasticity laws lead to simple strain-stress relations. It was shown that the maximum value of the thermal stress in the InSb part of the studied samples is well under the value of the yield stress of InSb at the working temperature of the devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>204</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>XRD measurement of thermal strain in InSb-based devices</s1></fA08><fA11 i1="01" i2="1"><s1>DECLEMY (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>RENAULT (P. O.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, UFR SFA, SP2MI, Téléport 2, Bvd M. et P. 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Assuming no shear component and no surface normal stress in the InSb upper part of the device and using linear elasticity laws lead to simple strain-stress relations. 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